High Power Solid State Power Amplifier

High Power Solid State Power Amplifier

High Power Solid State Power Amplifier (HPAs) are at the cutting edge of solid-state RF energy technology, distinguished by their ability to deliver substantial power efficiently and reliably in compact formats. Leveraging Gallium Oxide's superior electron mobility, thermal stability, and breakdown voltage, these amplifiers excel in demanding industrial, scientific, and medical applications. They are critical in processes requiring high precision and power, such as plasma generation, particle acceleration, and medical diagnostics. Gallium Oxide HPAs' high efficiency, robustness, and broad bandwidth make them indispensable for advancing technology in these fields, offering unmatched performance for high-power RF applications.


→  The High Power Solid State Power Amplifier (HPAs) are engineered to operate within a narrow frequency bandwidth from 1496MHz to 1502MHz, optimizing signal integrity and power delivery for specific RF applications.

→  These amplifiers are capable of delivering a formidable output power level of 4000W, ensuring substantial energy propagation for high-demand applications.

→  With an operational efficiency of 55%, these devices exemplify optimized power conversion methodologies, reducing energy losses and enhancing overall system performance.

→  The DC to RF conversion efficiency is maintained at 55%, indicating a proficient energy utilization ratio from direct current input to radio frequency output.

→  The HPAs are designed to operate with a direct current supply voltage (VDC) of 50V and accommodate an alternating current (VAC) input range from 380V to 480V, providing flexible power sourcing options.

→  Versatile operating modes are supported, including Continuous Wave (CW) and Pulse operations, allowing for application-specific waveform generation and modulation.

→  A robust Voltage Standing Wave Ratio (VSWR) tolerance of up to 6:1 is integrated, demonstrating the amplifier's capability to withstand significant load mismatches without performance degradation.

→  The inclusion of a 3 1/8 inch EIA waveguide output facilitates efficient coupling and transmission of high-power RF energy, minimizing transmission losses.

→  Advanced water cooling systems are implemented to effectively dissipate the substantial thermal loads generated by high-power operations, ensuring thermal stability and prolonged device longevity.

→  Electrical connectivity is secured through a 3P4W (L1/L2/L3/N) line connection scheme, providing a comprehensive electrical interface for reliable power supply and system integration.

→  Dimensionally, the amplifiers are constructed with a footprint of 600mm (W) x 750mm (D) x 2031mm (H), accommodating the intricate internal components and cooling mechanisms within a compact structure.

→  The substantial weight of 150kg underscores the robust construction and extensive capabilities housed within the amplifier chassis.

→  An Ethernet interface is incorporated to facilitate network connectivity, enabling remote monitoring, control, and integration into larger systems, enhancing operational flexibility and accessibility.